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epitaxial

网络外延；磊晶；晶膜

epitaxial

网络释义

epitaxial

外延

IT专业英语词典-E ... enzyme 酶，酵素 epitaxial 外延 epitaxial diode 外延二极管 ...

磊晶

基本上，GaN LED 是以磊晶(Epitaxial) 方式生长在蓝宝石基板(Sapphire Substrate)上，由于磊晶GaN 与底部蓝宝石基板的晶格 …

晶膜

英语新词汇与常用词汇的翻译 - 外国语 -... ... epitasis 剧情发展 epitaxial 晶膜 epitaxy 取向附生 ...

外延的

光电词汇港台地区译法(E) - 飞达光学网 ... episcotister 频闪观测盘 epitaxial 取向附生的，外延的 epitaxial film 取向附生膜 ...

磊晶技术

磊晶技术 (Epitaxial)  蚀刻技术 (Etching)  光阻剂 (Photoresist)  显影 (Lithogtaphy)  制作 P 阱 (P-Well) 之步骤 1.

磊晶式

低成本宽带射频开关应用采用体效应 (Bulk) 和磊晶式 (Epitaxial) PIN 二极管的比较 in PDF (122 KB)硅芯片技术的演进带来了更 …

累晶技术

VLSI概论谢永瑞 - 蔚蓝网|蔚蓝书店 ... ... 2. 1. 2 氧化技术 Oxidation 2. 1. 3 累晶技术 Epitaxial 2. 1. 4 蚀刻技术 Etching ...

例句：

Also the final texture of ISM processed Ni tape is stable after high temperature treatment , which can be used for epitaxial film growth.

进行的高温热退火实验证明获得的织构在一定的条件下是稳定的，可以用于外延薄膜的生长；

Such an enhancement could be attributed to the reduce dislocation density in the lateral growth regions of the epitaxial layers .

如此的改善可归因于在横向长磊晶层的区域缺陷密度减少造成的结果。

Experiments show that the epitaxial growth structure could be used in the preparation of APD devices .

测试结果表明，利用所采用的外延生长结构制备 APD 器件，具有可行性。

In this paper, experiment of homogeneous epitaxial , growing of single crystal diamond film by flame method in atmosphere was conducted .

采用大气下火焰法进行了金刚石单晶膜的同质外延实验。

The measurements of XRD, SEM and XPS show that the as- grown BNN film is epitaxial single crystal with smooth surface.

X 射线衍射，扫描电子显微镜，X 射线光电子能借测量表明生长的 BNN 膜是外延单晶膜。

Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface .

外延沉积接着用以形成一外延层于该外延表面上。

And a brief description of the development of epitaxial The number of shape Combination .

并简单描述数形结合发展的外延。

A complication is that the films are strained and epitaxial, with hardly any defects .

一个复杂因素是薄膜为应变和单晶的，几乎没有任何缺陷。

Commercial GaAs epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible

市售 GaAs 外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。

The processing process comprises the following steps of : combining an epitaxial layer and a thick silicon substrate ; scribing ;

该制程包括下列步骤：外延层与厚硅衬底结合的步骤；

Study of transition metal silicides thin film epitaxial growth on silicon substrate

硅基底上外延生长过渡金属硅化物薄膜的研究

Algebraic Multigrid Method for a Multiscale Elastic Model of Thin Epitaxial Films

求解外延膜多尺度应变模型的代数多重网格法

Laser-enhanced epitaxial growth of semiconductor heterostructure

激光增进的半导体异质结外延生长

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