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60.1-60.6

60.1-60.6

60.1-60.6

60.1-60.6

1

At the corner of the gate polysilicon (14 . 3 ) and the polysilicon tiles (14. 1 and 14. 2) are oxide spacers (60. 1-60. 6).

栅极多晶硅（14.3 ）和所述多晶硅瓦片（14.1 和 14.2 ）的角落处是氧化物间隔物（60.1-60.6 ）。

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