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镓

n.【化】gallium
网络Ga; GaN; CIGS

镓

英-汉英-英网络释义

镓

Ga

镓矿，提取镓（Ga）金属的矿产。镓是银白色的软金属，在人体温度下（37℃）便熔化成液态。

gallium

而IGZO面板技术则是铟(Indium)、镓(Gallium)、锌(Zinc)、氧(Oxygen)四种化学元素的英文首字母缩写，也就是“铟镓锌氧化物” …

GaN

而化铟镓(GaN)的蓝、绿光LED市场主要由日本的Nichia、Toyoda、Gosei与美国Cree、欧洲OSRAM-OptoSemiconductors等 …

CIGS

...活性材料有:非结晶硅(a-Si), 二硒化铜, 镓(CIGS) 铟, 或碲化镉(CdTe).尽管低成本预期没有实现,但预计第二代太阳能电池会 …

InGaN

...合物理系推动之「蓝光雷射计画」，执行氮化铟镓(InGaN) 半导体雷射的元件设计、以及光学量测的研究工作。

Gallium, Ga

...al Ion Source,LMIS)，金属材质为镓(Gallium, Ga)，因为镓元素具有低熔点、低蒸气压、及良好的抗氧化力；典型的离子束显 …

In, Ga

然而因为CIGS太阳电池的组成材料中，铟和镓(In, Ga)为稀有元素，且硒(Se)具有毒性，因此有相当多的研究投入探讨寻求取代 …

gallium arsenide

一个光控晶闸管（photo-thyristor）耦合（couple to）一个砷化镓（gallium arsenide）红外发光二极管（diode）组成。左边1 …

例句：

The grades of Cd, Ga and In in the deposit are all over the least industrial grade as the associated useful composition.

该矿床铅锌矿化系列矿石中镉、镓、铟含量均超过其作为伴生有用组分的最低工业品位；

The Cobalt-Nickel-Gallium alloy is similar in structure to one of the most commonly used SMAs, and reacts in ways similar to that material .

钴镍镓合金在结构上和使用 SMA 材料的某种最常见的合金很相似，其反应方式也与其类似。

The most effective material for thin-film photovoltaics so far is copper indium gallium selenide (known as CIGS).

目前为止，光电薄膜最有效的材质是铜铟硒化镓（CIGS ）。

They turned out to be the undiscovered elements scandium , gallium , technetium and germanium .

那时还没发现的元素就是钪，镓，锗和锝。

The invention relates to a solar battery cuprum-indium-gallium-selenium film key target material and a preparation method thereof.

本发明涉及一种太阳能电池铜铟镓硒薄膜关键靶材及其制备方法。

The possibility of removal of gallium from hot metal by chlorination treatment is discussed from the point of view of thermodynamics .

本文主要是从热力学的角度简要地分析了采用氧化法和氯化法进行铁水提镓处理的可能性。

Conclusion Gallium salt has therapeutic effect on osteoporosis or is able to retard the progress of this disease .

结论镓盐对骨质疏松症有治疗或减缓其进程的作用。

Optical properties of InGaN with different indium content have been systematically studied by temperature dependent photoluminescence (PL).

主要内容包括：利用光致发光谱研究了不同组分铟镓氮材料的光学特性。

Gallium arsenide , silicon , and germanium are all examples of semiconductors, the type of material used in virtually all modern electronics .

镓砷化物，硅，和锗元素都属于半导体，而如今半导体在所有的现代电子元件中都会用到。

The best mix they came up with was an alloy of gallium and indium .

他们发现最佳组合为镓和铟合金。

From a political point of view , GASB 34 proved to be very divisive .

从政治角度来看，锑化镓 34 证明是非常分歧。

The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride .

这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。

Currently , using photo -enhance chemical etching (PEC) has been proven to be an efficient method to roughen then-type GaN surface .

现在，光辅助化学湿蚀刻法（photo-enhancechemicalwetetchingmethod ）已被证实可以有效的粗化 N 型氮化镓表面，且会形成规则的六面体形状。

This protects the rigid gallium arsenide components from strain , but the system as a whole is flexible and stretchable.

这样就可以避免张力对于砷化镓元件损伤，但整个系统却表现出一种柔性。

Since GASB's inception , SEA reporting has been a topic of discussion .

锑化镓自成立以来，海汇报了讨论的议题。

Early on, GASB began espousing the concept of public accountability .

早期，锑化镓开始拥护的概念，公共问责制。

Other companies , notably Heliovolt and Nanosolar, are in a race to make thin-film panels using copper indium gallium selenide (CIGS) cells .

其它一些公司，诸如 Heliovolt 以及 Nanosolar ，也在用铜铟镓硒（CIGS ）电池来参与这场薄膜电池竞赛。

and finally changing the air pressure of a growth chamber to grow a gallium nitride layer .

最后改变生长室气压，生长一层氮化镓层。

Toproducetheelectron beam , a laser will fire at a target made of gallium arsenide , knocking off billions of electronswitheach pulse .

产生电子射束的方法，是利用一道雷射轰击用砷化镓制成的标靶，每个脉冲会打出几十亿个电子。

Silicon , germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices , while silicon is the most popular one .

集成电路和各种半导体器件制造中所用的材料，目前主要是硅、锗和砷化镓等单晶体，其中又以硅为最多。

Regular pyramids would form on then-GaN surface . We use KOH solution to be the etching solution of PEC process.

我们使用氢氧化钾溶液（KOH ）当作 PEC 的蚀刻液去蚀刻 N 型氮化镓表面。

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