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栅极

na.【电】grid; grid electrode
网络Gate; gate electrode; poly gate

栅极

英-汉网络释义

栅极

na.

1.【电】grid; grid electrode

1

A first conductive impurity ion is implanted into a semiconductor substrate to form a well area on which a gate electrode is formed.

向半导体衬底中注入第一导电杂质离子，由此形成阱区，其上再形成栅极。

2

The one gate insulating layer may be interposed between the common gate electrode and the one pair of fins of the semiconductor substrate .

栅极绝缘层置于所述公共栅极电极和所述半导体衬底的所述鳍对之间。

3

Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.

并且本发明还提供了一种包括栅极结构的半导体器件，该栅极结构的栅极顶部宽度大于栅极底部宽度。

4

It was the first triode vacuum tube, incorporating a control grid as well as a cathode and an anode .

其是由一个控制栅极、一个阴极和一个阳极组合起来的真空管。

5

6

The grid is laid across under a tensioned state between the mounting members and arranged in an opening of the shield casing .

栅极，被张架在安装部件之间，并被设置在屏蔽罩的开口部；

7

The floating grid contacts with the separator with crescent width from the bottom to the top .

浮置栅极接触分隔件，并具有从下部向上部逐渐增加的宽度。

8

In concert , the two gates are able to control the undoped channel without its having to be ridiculously thin .

通过协同作用，两个栅极就能够控制无掺杂沟道，而无需让沟道细得离谱。

9

A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode .

置于所述至少一个导电保护电极之上但是与所述导电保护电极隔离开的栅极；

10

Semiconductor devices having a gate-all-around (GAA) structure capable of higher operating performance may be provided.

本发明涉及具有周围栅极（GAA ）结构的能够实现高操作性能的半导体器件。

13

and a first drain formed in the active region and disposed on a second region adjacent the first gate from a second side.

以及一第一漏极形成于该有源区域中，且设置于一第二区域上，邻接该栅极。

14

He also highlighted the company's recent debut of 22nm, 3 -D transistor technology, known as Tri-Gate transistors.

同时他还强调了公司最近的热点的 22 纳米 3D 晶体管技术，被称为三栅极晶体管。

15

In FET devices , the presence of an electrical field at the gate moderates the flow between the source and drain .

在 FET 器件中，栅极电场的存在会调节源极和漏极之间的电流。

16

finally, a plurality of stacking grid structures of the work line area and selecting grid structures of the selecting grid area can be made .

之后，还可进行制造字线区域的多个堆叠栅极结构以及选择栅极区域的选择栅极结构的工艺。

18

19

When the current applied by the gate is high enough , electrons flow through the channel between the source and drain electrodes .

当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。

20

A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.

源区和漏区形成在鳍部内栅极的相对侧处。

21

Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time.

通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。

22

Secondly , we fabricated two SIT-OLETs with a strip-shape and a mesh-shape gate , respectively.

其次，我们制备了具有条状栅极和网状栅极的 SIT-OLET 。

23

26

A non-uniform tunnel oxide may result in a non-uniform field between a gate and a channel .

不均匀的沟道氧化物可能会造成栅极和沟道间的不均匀的场。

27

and a logic gate circuit is connected to the gate of the programming transistor .

且将一逻辑门电路连接至所述编程晶体管的栅极。

29

Such a gate length would keep Moore 's law rolling for several years .

这样长度的栅极将可以让摩尔定律继续成立一些年。

30

The plasma potential gradient across the grid and the hot-filament draws ions from the plasma towards the filaments.

等离子体的电位梯度跨越栅极，热灯丝将从等子体中抽取的离子超向灯丝。

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